Process Hierarchy

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  Silicon dioxide PECVD
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0.01 .. 3.25 µm
0.01 .. 3.25 µm
Ambient to which substrate is exposed during processing
nitrous oxide, silane
Deposition rate
Rate at which material is added to a wafer
310 Å/min
Material silicon dioxide
Microstructure amorphous
Pressure of process chamber during processing
650 mTorr
Refractive index 1.44
Residual stress -350 MPa
Sides processed either
Temperature 350 °C
Wafer size
Wafer size
Equipment STS PECVD
Equipment characteristics:
Batch sizes 100 mm: 2, 50 mm: 2, 75 mm: 2
Piece geometry
Geometry of wafer pieces the equipment can accept
circular, irregular, rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
200 .. 1000 µm
Wafer holder
Device that holds the wafers during processing.
heated plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
gallium arsenide, glass (category), quartz (single crystal), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • This system is gold contaminated.
  • Wafer pieces are allowed.