Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Nitrogen anneal
Process characteristics:
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
Running time of the process (excluding setup/shutdown time), must be 0 .. 1440 min
0 .. 1440 min
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 400 .. 1100 °C
400 .. 1100 °C
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Batch size 25
Sides processed both
Wafer size
Wafer size
Equipment Tylan Furnace (N2 anneal, Tubes #1 .. #4, #7)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • The equipment time consists of "the anneal time" plus the "ramp up & ramp down times" plus "the boat in and out times".