|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
|---|
| Batch size |
1 |
|---|
| Pressure Pressure of process chamber during processing |
1 atm |
|---|
| Process duration |
30 min |
|---|
| Sides processed |
both |
|---|
| Temperature |
150 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Singe oven |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
teflon boat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator, quartz (single crystal), germanium |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 550 µm |
|---|
