Process Hierarchy

on front
  Silicon dioxide VLR700 PECVD
Process characteristics:
must be 0.01 .. 2 µm
0.01 .. 2 µm
Deposition rate
Rate at which material is added to a wafer
270 Å/min
Gas 5% Silane, Nitrous oxide, Helium
Material silicon dioxide
Microstructure amorphous
Pressure of process chamber during processing
900 mTorr
Refractive index 1.45
Residual stress -250 MPa
Sides processed either
Temperature 250 °C
Wafer size
Wafer size
Equipment Unaxis VLR 700 PECVD
Equipment characteristics:
Batch sizes 100 mm: 25
Wafer geometry
Types of wafers this equipment can accept
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm