Process Hierarchy

  Undoped polysilicon LPCVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Deposition rate
Rate at which material is added to a wafer
80 Å/min
Excluded materials gold
Material polysilicon
Measured film thickness variation (+/- %) 8.7
Pressure of process chamber during processing
300 mTorr
Setup time 60 min
Sides processed both
Temperature 610 °C
Wafer size
Wafer size
Equipment Tylan/Tystar Furnaces (undoped polysilicon tube)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 9
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
fused silica boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm