Process Hierarchy

  High temperature silicon dioxide (HTO) LPCVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 1.2 µm
0 .. 1.2 µm
Ambient to which substrate is exposed during processing
Batch size 24
Deposition rate
Rate at which material is added to a wafer
0.005 µm/min
Material silicon dioxide
Measured film thickness variation (+/- %) 2.2
Pressure of process chamber during processing
0.048 kPa
Residual stress -155 MPa
Sides processed both
Temperature 910 .. 930 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (C-stack, tube #4)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 800 µm
  • Index of refraction= 1.45
    uniformity ~ 3%
    Buffered HF etch rate ~ 1500 A/min