Process Hierarchy

on front
  Zinc oxide RF-magnetron sputtering Down
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 3 µm
0 .. 3 µm
Ambient to which substrate is exposed during processing
argon, oxygen
Material zinc oxide
Measured film thickness variation (+/- %) 13.1
Setup time 180 min
Sides processed either
Temperature 200 .. 300 °C
Wafer size
Wafer size
Equipment MRC Sputterer for Zinc Oxide
Equipment characteristics:
Batch sizes 100 mm: 3, 150 mm: 2
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm