Process Hierarchy

  Low-stress polysilicon LPCVD I (100MPa)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 1 µm
0 .. 1 µm
Batch size 24
Deposition rate
Rate at which material is added to a wafer
40 Å/min
Material polysilicon
Pressure of process chamber during processing
0.0146 kPa
Residual stress 50 .. 100 MPa
Sides processed both
Temperature 588 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (C-stack, tube #3)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 800 µm