Anodic bonding (vacuum, without alignment) |
|
Alignment type Method used to align materials to be bonded. |
unaligned |
Bonded materials Pair of materials bonded by this process |
silicon, Pyrex (Corning 7740), glass (Hoya) |
Pressure Pressure of process chamber during processing |
0.1 mTorr |
Wafer size |
|
Equipment |
EVG 501 Bonder
|
Equipment characteristics: |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
Wafer holder Device that holds the wafers during processing. |
metal chuck |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, Pyrex (Corning 7740) |
Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 3000 µm |