Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  PSG LPCVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Batch size 25
Deposition rate
Rate at which material is added to a wafer
 0.037 µm/min
Material phosphosilicate glass
Measured film thickness variation (+/- %) 3.3
Pressure
Pressure of process chamber during processing
 300 mTorr
Sides processed either
Temperature 400 °C
Wafer size
Wafer size
Equipment Tylan Furnace (LTO, Tube #11)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 550 µm
Comments:
  • Wafer cleaning is required prior to this process. If the wafers don't have any metal, they can be cleaned in the diffusion wet bench. However the wafers with metal should be cleaned in the metal wet bench prior to this process.