Process Hierarchy

on front
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Batch size 25
Deposition rate
Rate at which material is added to a wafer
0.037 µm/min
Material phosphosilicate glass
Measured film thickness variation (+/- %) 3.3
Pressure of process chamber during processing
300 mTorr
Sides processed either
Temperature 400 °C
Wafer size
Wafer size
Equipment Tylan Furnace (LTO, Tube #11)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 550 µm
  • Wafer cleaning is required prior to this process. If the wafers don't have any metal, they can be cleaned in the diffusion wet bench. However the wafers with metal should be cleaned in the metal wet bench prior to this process.