Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Silicon nitride LPCVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 100 .. 200 nm
100 .. 200 nm
Batch size 50
Deposition rate
Rate at which material is added to a wafer
 3 nm/min
Excluded materials gold (category), copper
Material silicon nitride
Measured film thickness variation (+/- %) 3.2
Microstructure amorphous
Pressure
Pressure of process chamber during processing
 300 mTorr
Residual stress 1100 MPa
Sides processed both
Temperature 820 °C
Wafer size
Wafer size
Equipment MRL furnace 321-1
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • Wafers must be RCA cleaned within 24 hours of loading, or transferred directly from another furnace.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.