Process Hierarchy

  Silicon nitride LPCVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 100 .. 200 nm
100 .. 200 nm
Batch size 50
Deposition rate
Rate at which material is added to a wafer
3 nm/min
Excluded materials gold (category), copper
Material silicon nitride
Measured film thickness variation (+/- %) 3.2
Microstructure amorphous
Pressure of process chamber during processing
300 mTorr
Residual stress 1100 MPa
Sides processed both
Temperature 820 °C
Wafer size
Wafer size
Equipment MRL furnace 321-1
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • Wafers must be RCA cleaned within 24 hours of loading, or transferred directly from another furnace.
Extra terms