PSG LPCVD: View
Low-stress SiN deposition
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
or call us at (703) 262-5368
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Rate at which material is added to a wafer
gold (category), copper
Measured film thickness variation (+/- %)
Pressure of process chamber during processing
400 .. 450 °C
MRL furnace 321-4
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
Some oxide to deposit on back side of substrates
6.98% Phosphorous (wt%)
Wafers must be RCA cleaned within 24 hours of loading, or transferred directly from another furnace.
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.
How to Start