Anodic bonding (with alignment) |
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Process characteristics: |
Alignment type Method used to align materials to be bonded. |
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Contact force Specify contact force applied to substrates during bonding. |
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Temperature Temperature of the substrates during bonding. |
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Voltage Voltage applied across wafers during bonding. |
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Alignment tolerance Registration of CAD data to features on wafer |
1 µm |
Batch size |
2 |
Bonded materials Pair of materials bonded by this process |
Pyrex (Corning 7740), silicon |
Pressure Pressure of process chamber during processing |
100 mTorr |
Wafer size |
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Equipment |
EVG 501
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Equipment characteristics: |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
Wafer holder Device that holds the wafers during processing. |
metal chuck |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, Pyrex (Corning 7740) |
Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 1000 µm |
Comments: |
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