Process Hierarchy

on front
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Ambient to which substrate is exposed during processing
oxygen, silane
Batch size 50
Deposition rate
Rate at which material is added to a wafer
150 Å/min
Excluded materials gold (category), copper
Material silicon dioxide (low temperature)
Microstructure amorphous
Pressure of process chamber during processing
350 mTorr
Sides processed either
Temperature 400 .. 450 °C
Wafer size
Wafer size
Equipment MRL furnace 321-4
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • Some oxide to deposit on back side of substrates
  • Wafers must be RCA cleaned within 24 hours of loading, or transferred directly from another furnace.
Extra terms