Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Nitrogen anneal
Process characteristics:
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
Running time of the process (excluding setup/shutdown time), must be 5 .. 480 min
5 .. 480 min
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 900 .. 1175 °C
900 .. 1175 °C
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Batch size 25
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Wafer size
Wafer size
Equipment Thermco TMX furnace (A-stack, tube #4)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 silicon carbide boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 500 .. 850 µm