Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Indium Tin Oxide (ITO) DC-magnetron sputtering
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 100 .. 2000 Å
100 .. 2000 Å
Ambient
Ambient to which substrate is exposed during processing
 argon
Deposition rate
Rate at which material is added to a wafer
 330 Å/min
Excluded materials gold (category), copper
Material indium tin oxide
Power
Microwave power radiated into substrates being bonded
 250 W
Pressure
Pressure of process chamber during processing
 5 mTorr
Residual stress -403.27 MPa
Sides processed either
Wafer size
Wafer size
Equipment Denton Discovery 24
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
Wafer holder
Device that holds the wafers during processing.
 stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 alumina, Borofloat (Schott), silicon, silicon dioxide
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Comments:
  • The target is 90% In2O3 / 10% SnO2.
  • The resistivity of the film 114.1 Ohms/Sq (1650A thickness)
  • Stress on Si -403.27MPa compressive (1650A)
  • The film thickness is measured using a glass slide, placed next to the wafer in the deposition chamber. Half of the slide is covered using a Kapton tape.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.