Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon nitride PECVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.01 .. 3.25 µm
0.01 .. 3.25 µm
Ambient
Ambient to which substrate is exposed during processing
 ammonia, silane
Deposition rate
Rate at which material is added to a wafer
 97 Å/min
Material silicon nitride
Measured film thickness variation (+/- %) 16
Microstructure amorphous
Pressure
Pressure of process chamber during processing
 650 mTorr
Refractive index 2.002
Residual stress 50 MPa
Sides processed either
Temperature 350 °C
Wafer size
Wafer size
Equipment STS PECVD
Equipment characteristics:
Batch sizes 100 mm: 2, 50 mm: 2, 75 mm: 2
Piece geometry
Geometry of wafer pieces the equipment can accept
 circular, irregular, rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
 200 .. 1000 µm
Wafer holder
Device that holds the wafers during processing.
 heated plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 gallium arsenide, glass (category), quartz (single crystal), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • This system is gold contaminated.
  • Wafer pieces are allowed.
  • The silane gas is in the form of 2% silane in N2.