on front Silicon nitride PECVD |
|
| Process characteristics: |
| Thickness Thickness of material to be deposited. |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
ammonia, silane |
|---|
| Deposition rate Rate at which material is added to a wafer |
97 Å/min |
|---|
| Material |
silicon nitride |
|---|
| Measured film thickness variation (+/- %) |
16 |
|---|
| Microstructure |
amorphous |
|---|
| Pressure Pressure of process chamber during processing |
650 mTorr |
|---|
| Refractive index |
2.002 |
|---|
| Residual stress |
50 MPa |
|---|
| Sides processed |
either |
|---|
| Temperature |
350 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
STS PECVD |
| Equipment characteristics: |
| Batch sizes |
100 mm: 2, 50 mm: 2, 75 mm: 2 |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, rectangular |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
200 .. 1000 µm |
|---|
| Wafer holder Device that holds the wafers during processing. |
heated plate |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, glass (category), quartz (single crystal), silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
| Comments: |
|
