Process Hierarchy

  Multipoly Process: Recipe #1
Batch size 50
Excluded materials gold (category), copper
Material polysilicon
Measured film thickness variation (+/- %) 3
Microstructure polycrystalline
Radius of curvature of released structures 800 mm
Residual stress -8 MPa
Sides processed both
Stress gradient 0.2 MPa/µm
Temperature 615 °C
Thickness 4.69 µm
Wafer size
Wafer size
Equipment MRL furnace 321-2
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
Comments:
  • This zero-stress multipoly recipe involves 9 sequential depositions with following thickness values (starting at substrate) 0.49, 0.66, 0.56, 0.34, 0.71, 0.50, 0.41, 0.46, 0.47 (all in ┬Ám).
  • Odd numbered layers were deposited at 570 C and even numbered layers deposited at 615 C.
Extra terms