Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  LTO LPCVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.05 .. 3 µm
0.05 .. 3 µm
Batch size 25
Deposition rate
Rate at which material is added to a wafer
 0.0225 µm/min
Material silicon dioxide
Measured film thickness variation (+/- %) 8.5
Pressure
Pressure of process chamber during processing
 235 mTorr
Residual stress -300 .. -200 MPa
Sides processed both
Temperature 400 °C
Wafer size
Wafer size
Equipment Tylan Furnace (LTO, Tube #11)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 550 µm
Comments:
  • Setup = 20 min. vent + 20 min. load + 100 min. ramp up, etc. + 20 min. unload + 60 min. stripping dummies = 220 min.
  • Requires clean: Pre-LPCVD Nonmetal