How to Start
LTO LPCVD: View
Low-stress SiN deposition
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
or call us at (703) 262-5368
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0.05 .. 3 µm
0.05 .. 3 µm
Rate at which material is added to a wafer
Measured film thickness variation (+/- %)
Pressure of process chamber during processing
-300 .. -200 MPa
Tylan Furnace (LTO, Tube #11)
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
List or range of wafer thicknesses the tool can accept
100 .. 550 µm
Setup = 20 min. vent + 20 min. load + 100 min. ramp up, etc. + 20 min. unload + 60 min. stripping dummies = 220 min.
Requires clean: Pre-LPCVD Nonmetal