Process Hierarchy

on front
  G-line photoresist coat (OCG 825 35CS)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer
Deposition rate
Rate at which material is added to a wafer
1 µm/min
Material OCG 825 35CS
Setup time 30 min
Sides processed either
Temperature 23 °C
Wafer size
Wafer size
Equipment SVG 8600 Photoresist Coat Track
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
vacuum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm