Rapid Thermal Anneal Oxide, Nitride (air, oxygen, nitrogen) |
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| Process characteristics: |
| Anneal ambient |
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| Process duration |
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| Temperature |
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| Sides processed |
both |
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| Wafer size |
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| Equipment |
Heat Pulse 610 Dielectric Rapid Thermal Anneal |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 125 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
quartz chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 600 µm |
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