Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Phosphorus-doped polysilicon LPCVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Batch size 50
Deposition rate
Rate at which material is added to a wafer
 0.0025 µm/min
Excluded materials gold (category), copper
Material polysilicon (n-type)
Pressure
Pressure of process chamber during processing
 300 mTorr
Resistivity 0.0012 Ω*cm
Sides processed both
Temperature 580 °C
Wafer size
Wafer size
Equipment MRL furnace 321-3
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 550 µm
Comments:
  • Wafers must be RCA cleaned within 24 hours of loading,or transferred directly from another furnace.
  • Doping: ~10^20 /cm^3
  • As deposited polysilicon films have compressive residual stress.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.