on front Xenon difluoride (XeF2) Isotropic Si Etch (Xactix) |
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| Process characteristics: |
| Depth |
|
|---|
| Batch size |
1 |
|---|
| Etch rate |
1 µm/min |
|---|
| Etch type |
dry isotropic |
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| Gas |
XeF2, Nitrogen |
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| Materials |
silicon, polysilicon |
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| Sides processed |
either |
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| Temperature |
25 °C |
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| Wafer size |
|
|---|
| Equipment |
Xactix, XeF2 Isotropic Si Etch |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
aluminum plate |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 700 µm |
|---|
