Process Hierarchy

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  Xenon difluoride (XeF2) Isotropic Si Etch (Xactix)
Process characteristics:
must be 0 .. 50 µm
0 .. 50 µm
Batch size 1
Etch rate 1 µm/min
Etch type dry isotropic
Gas XeF2, Nitrogen
Materials silicon, polysilicon
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Xactix, XeF2 Isotropic Si Etch
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
aluminum plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 700 µm