Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Resistive evaporation
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Sides processed either
Equipment
Comments:
  • The substrate is placed in a high vacuum chamber at room temperature with a crucible containing the material to be deposited. A high electrical current is applied through the tungsten crucible, heating it up beyond the boiling point of the material to be deposited, thereby causing it to evaporate and condense on all exposed cool surfaces on the vacuum chamber and substrate. The process is typically performed on one side of the substrate at a time.