Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Rapid thermal anneal (argon)
Process characteristics:
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration*
Running time of the process (excluding setup/shutdown time), must be 0 .. 5 min
0 .. 5 min
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 300 .. 1050 °C
300 .. 1050 °C
Ambient
Ambient to which substrate is exposed during processing
 argon
Batch size 1
MOS clean no
Setup time 60 min
Sides processed both
Wafer size
Wafer size
Equipment AG Heatpulse 210 Rapid Thermal Processing Systems
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm