Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon Nitride RIE (clean)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 1.5 µm
0 .. 1.5 µm
Allowed metals Al, Mo, W, Ti, Ni, Ta
Edge profile
Free form text field for description of edge profile
 vertical
Etch rate 150 Å/min
Material silicon nitride
Pressure
Pressure of process chamber during processing
 100 mTorr
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 2, silicon dioxide: 1, silicon nitride: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment PlasmaTherm SL 700
Equipment characteristics:
Batch sizes 100 mm: 4
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 3000 µm