Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Titanium DC sputtering
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 3 µm
0 .. 3 µm
Material titanium
Sides processed either
Wafer size
Wafer size
Equipment Oxford sputtering system
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
 metal chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1500 µm