|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Deposition rate Rate at which material is added to a wafer |
1 µm/hour |
|---|
| Material |
Parylene C |
|---|
| Sides processed |
both |
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| Temperature |
23 °C |
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| Wafer size |
|
|---|
| Equipment |
Parylene deposition system |
| Equipment characteristics: |
| Batch sizes |
100 mm: 3 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
ceramic, Foturan (Schott), glass (category), Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator, stainless steel |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 500 µm |
|---|
