Process Hierarchy

  Parylene C deposition
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 15 µm
0.1 .. 15 µm
Deposition rate
Rate at which material is added to a wafer
1 µm/hour
Material Parylene C
Sides processed both
Temperature 23 °C
Wafer size
Wafer size
Equipment Parylene deposition system
Equipment characteristics:
Batch sizes 100 mm: 3
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
ceramic, Foturan (Schott), glass (category), Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator, stainless steel
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 500 µm