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I-line photoresist coat (OiR 897 10i): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
I-line photoresist coat (OiR 897 10i)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness
*
1.0 um
2.0 um
Amount of material added to a wafer
Deposition rate
Rate at which material is added to a wafer
1 µm/min
Material
Arch OiR 897-10i
Setup time
30 min
Sides processed
either
Temperature
23 °C
Wafer size
Wafer size
100 mm
150 mm
Equipment
SVG 8600 Photoresist Coat Track
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
vacuum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm