on front Aluminum Nitride AC magnetron reactive sputtering |
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| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Allowed materials |
silicon nitride, polysilicon, silicon, silicon dioxide, platinum |
|---|
| Ambient Ambient to which substrate is exposed during processing |
oxygen, argon |
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| Material |
aluminum nitride |
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| Residual stress |
-200 .. 200 MPa |
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| Sides processed |
either |
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| Temperature |
400 °C |
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| Wafer size |
|
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| Equipment |
AlN Sputterer
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| Equipment characteristics: |
| Batch sizes |
100 mm: 1 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
