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Post-aluminum plasma etch (passivation and strip): View
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Post-aluminum plasma etch (passivation and strip)
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1.5 µm
0 .. 1.5 µm
Ambient to which substrate is exposed during processing
water, nitrogen, oxygen
Free form text field for description of loading effects (e.g. bullseye)
Min feature size
Pressure of process chamber during processing
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 1
Applied Materials Precision 5000 (chamber D)
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, quartz (single crystal), silicon on insulator, silicon germanium
List or range of wafer thicknesses the tool can accept
400 .. 750 µm
Etcher is MOS clean.
\ No Backside resist. For Quartz substrates Al must be on backside.
High power process; Passivation 800W, Strip 1400W.