Process Hierarchy

on front
  Titanium/nickel DC-magnetron sputter
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
argon
Batch size 1
Deposition rate
Rate at which material is added to a wafer
1 µm/hour
Excluded materials gold (category), copper
Material titanium/nickel
Microstructure martensite
Sides processed either
Temperature 430 °C
Wafer size
Wafer size
Equipment DVI Discovery-18
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 10000 µm
Comments:
  • TiNi (50:50)
Extra terms