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About MEMS
Nitrogen anneal: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Anneal
Bake
Oxidation
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Nitrogen anneal
Process characteristics:
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
hour
min
s
Running time of the process (excluding setup/shutdown time), must be 0 .. 4 hour
0 .. 4 hour
Temperature
Maximum temperature the substrate reaches during a process
Temperature
*
°C
Maximum temperature the substrate reaches during a process, must be 750 .. 1100 °C
750 .. 1100 °C
Ambient
Ambient to which substrate is exposed during processing
nitrogen
Excluded materials
gold
Setup time
60 min
Sides processed
both
Wafer size
Wafer size
100 mm
150 mm
Equipment
Tylan/Tystar Furnaces
Equipment characteristics:
Batch sizes
100 mm: 24, 150 mm: 24
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm
Attachments
20180214_MEMS-EX_25.JPG
(70.7 KB, image/jpeg)
attached by rhemp (Richelieu Hemphill) on 2018-02-20 13:33
W025 SHEET RESISTANCE MEASUREMENT
20180214_MEMS-EX_1.JPG
(70.8 KB, image/jpeg)
attached by rhemp (Richelieu Hemphill) on 2018-02-20 13:33
W001 SHEET RESISTANCE MEASUREMENT