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About MEMS
Photoresist coat (Shipley 1813): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Photoresist coat (Shipley 1813)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 1.3 .. 2.5 µm
1.3 .. 2.5 µm
Batch size
1
Excluded materials
gold (category), copper
Material
Shipley 1813
Sides processed
either
Wafer size
Wafer size
100 mm
150 mm
Equipment
Solitec 5110-C
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide, alumina
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.