Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  LTO LPCVD (both sides)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.3 .. 4 µm
0.3 .. 4 µm
Batch size 9
MOS clean no
Material silicon dioxide
Sides processed both
Temperature 420 °C
Uniformity -0.2 .. 0.2
Wafer size
Wafer size
Equipment Thermco TMX furnace (C-stack, tube #2)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 800 µm
Comments:
  • LTO on both wafer sides.
  • Process suffers from poor uniformity. Within wafer = +/- 15%; wafer to wafer = +/- 20%.
  • This furnace is metals-contaminated, because it is used to deposit over metalization.