Process Hierarchy

  LTO LPCVD (both sides)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.3 .. 4 µm
0.3 .. 4 µm
Batch size 9
MOS clean no
Material silicon dioxide
Sides processed both
Temperature 420 °C
Uniformity -0.2 .. 0.2
Wafer size
Wafer size
Equipment Thermco TMX furnace (C-stack, tube #2)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 800 µm
  • LTO on both wafer sides.
  • Process suffers from poor uniformity. Within wafer = +/- 15%; wafer to wafer = +/- 20%.
  • This furnace is metals-contaminated, because it is used to deposit over metalization.