Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  LTO LPCVD (single side)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 4 µm
0 .. 4 µm
Batch size 20
Material silicon dioxide
Sides processed either
Temperature 420 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (C-stack, tube #2)
Equipment characteristics:
MOS clean no
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 800 µm
Comments:
  • LTO on one wafer side only.