Process Hierarchy

on front
  LTO LPCVD (single side)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 4 µm
0 .. 4 µm
Batch size 20
Material silicon dioxide
Sides processed either
Temperature 420 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (C-stack, tube #2)
Equipment characteristics:
MOS clean no
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 800 µm
  • LTO on one wafer side only.