|
| Process characteristics: |
| Depth Depth of material removed by etch process |
|
|---|
| Batch size |
12 |
|---|
| Excluded materials |
gold (category), copper |
|---|
| Material |
photoresist (category) |
|---|
| Pressure Pressure of process chamber during processing |
1000 mTorr |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
|---|
| Sides processed |
both |
|---|
| Wafer size |
|
|---|
| Equipment |
Plasma Asher
|
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
quartz boat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Borofloat (Schott), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
| Comments: |
|
| Extra terms |
Customer agrees that wafers, masks, and other materials
incorporating any process(es) provided by this fabrication site
are to be used solely for non-commercial research
purposes.
|
