Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Photoresist ashing
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0.1 .. 10 µm
0.1 .. 10 µm
Batch size 12
Excluded materials gold (category), copper
Material photoresist (category)
Pressure
Pressure of process chamber during processing
 1000 mTorr
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 1
Sides processed both
Wafer size
Wafer size
Equipment Plasma Asher
  • To be used to clean DNQ based photoresist material only.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Comments:
  • 500 sccm O2, 500 W
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.