Process Hierarchy

on front
  Wafer curvature measurement (thermal expansion & biaxial modulus calculation)
Process characteristics:
Film thickness
Film thickness, must be 0.01 .. 500 µm
0.01 .. 500 µm
Batch size 2
Sides inspected
The sides of the wafer inspected by the process
Temperature 40 .. 500 °C
Wafer size
Wafer size
Equipment Tencor FLX-2320
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
aluminum ring, aluminum plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Pyrex (Corning 7740), quartz (single crystal), glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 2000 µm
  • Requires film deposition and
    measurements on two different
    substrate materials.
  • Must be preceded in sequence
    by wafer curvature
    before thin film deposition.
  • Stress-temperature
    range: 40 to 400 degC.