Silicon nitride PECVD (Unaxis VLR 700) |
|
| Process characteristics: |
| Thickness |
|
|---|
| Deposition rate Rate at which material is added to a wafer |
105 Å/min |
|---|
| Gas |
5% Silane, Nitrogen, Ammonia, Helium |
|---|
| Material |
silicon nitride |
|---|
| Microstructure |
amorphous |
|---|
| Pressure Pressure of process chamber during processing |
900 mTorr |
|---|
| Refractive index |
1.9 |
|---|
| Residual stress |
1850 MPa |
|---|
| Temperature |
250 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Unaxis VLR 700 PECVD |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
cassette |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 700 µm |
|---|
