Process Hierarchy

on front
  Silicon nitride (stress controlled) PECVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 5 µm
0 .. 5 µm
Batch size 25
Material silicon nitride
Refractive index 2
Residual stress -100 .. 100 MPa
Sides processed either
Temperature 380 °C
Equipment
Comments:
  • Wafers must be cleaned before
    shipping to fab.
  • 4" or 6" wafers