Process Hierarchy

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  Silicon DRIE (Bosch Process) Plasma Therm 770
Process characteristics:
must be 1 .. 750 µm
1 .. 750 µm
Aspect ratio 15
Etch rate 2 µm/min
Gas SF6, C4F8, Argon, O2
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
AZ 5214: 75, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Plasma Therm 770 Silicon DRIE (Bosch Process)
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 75 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
electrostatic chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 700 µm