Anodic bonding (without alignment) |
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Process characteristics: |
Bonding force |
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Second substrate side bonded |
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Substrate side bonded |
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Temperature Maximum temperature the substrate reaches during processing |
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Voltage Voltage applied across wafers during bonding |
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Alignment type Method used to align materials to be bonded. |
unaligned |
Pressure Pressure of process chamber during processing |
1 atm |
Second substrate diameter |
10 .. 100 mm |
Second substrate geometry |
wafer |
Second substrate materials |
Pyrex (Corning 7740), silicon |
Second substrate thickness |
200 .. 1000 µm |
Wafer size |
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Equipment |
EV 501 bonder |
Equipment characteristics: |
Batch sizes |
100 mm: 2 |
MOS clean |
no |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
glass (category), silicon |
Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1500 µm |
Comments: |
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