Process Hierarchy

  Prebake II
Ambient to which substrate is exposed during processing
Pressure of process chamber during processing
1 atm
Sides processed both
Temperature 120 °C
Thermal duration 20 min
Wafer size
Wafer size
Equipment Thermal ace hotplate
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 500 µm
  • Alternatively, the bake can be done on "CEE Hotplate" for 5 min at 300 C.