Process Hierarchy

  Anodic bonding (with alignment)
Process characteristics:
Bonding force
Bonding force*
must be 50 .. 5000 N
50 .. 5000 N
Second substrate side bonded
Second substrate side bonded*
Substrate side bonded
Substrate side bonded*
Maximum temperature the substrate reaches during processing
Maximum temperature the substrate reaches during processing, must be 20 .. 550 °C
20 .. 550 °C
Voltage applied across wafers during bonding
Voltage applied across wafers during bonding, must be 500 .. 1200 V
500 .. 1200 V
Alignment type
Method used to align materials to be bonded.
Allowed metals Cr, Au, Ti, Pt
Pressure of process chamber during processing
1 atm
Second substrate diameter 100 mm
Second substrate geometry wafer
Second substrate materials Pyrex (Corning 7740), silicon
Second substrate thickness 200 .. 1000 µm
Wafer size
Wafer size
Equipment EV 501 bonder
Equipment characteristics:
Batch sizes 100 mm: 2
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm
  • No organic materials permitted.
  • No metals on non-bonded wafer faces.
  • Maximum interconnect thickness between bonded pair = 300A.
  • Customer to provide bonding cross section and estimate of area bonded.
  • Other metals may be considered on an individual basis.