Process Hierarchy

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  Aluminum/silicon/copper DC-magnetron sputtering (low power)
Materialaluminum/silicon/copper [98:1:1]
Depth100 µm
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.01 .. 0.2 µm
0.01 .. 0.2 µm
Excluded materials gold (category), copper
Material aluminum/silicon/copper [98:1:1]
Wafer size
Wafer size
  • Film thickness measurements are performed by stylus profilometry. A separate, partially-masked substrate is loaded along with each wafer and is used to measure the thickness of the as-deposited film.
Extra terms